unisonic technologies co., ltd MMDT3904 preliminary npn epitaxial silicon transistor www.unisonic.com.tw 1 of 3 copyright ? 2011 unisonic technologies co., ltd qw-r218-013.a dual npn small signal surface mount transistor ? description the utc MMDT3904 is a dual npn small signal surface mount transistor. ? features * suitable for low power amplification and switching * epitaxial planar die construction * extremely-small surface mount package ? ordering information ordering number lead free halogen free package packing MMDT3904l-al6-r MMDT3904g-al6-r sot-363 tape reel MMDT3904l-al6-r (1)packing type (2)package type (1) r: tape reel (2) tl6: sot-363 (3) halogen free, l: lead free (3)lead free ? marking ? pin configuration
MMDT3904 preliminary npn epitaxial silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r218-013.a ? absolute maximum ratings (t a =25 c unless otherwise specified ) parameter symbol ratings unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 6.0 v collector current - continuous i c 200 ma power dissipation p d 200 mw thermal resistance, junction to ambient ja 625 /w junction temperature t j -55 ~ +150 c storage temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t a =25 c unless otherwise specified ) parameter symbol test conditions min typ max unit off characteristics (note 1) collector-base breakdown voltage v (br)cbo i c = 10 a, i e = 0 60 v collector-emitter breakdown voltage v (br)ceo i c = 1.0ma, i b = 0 40 v emitter-base breakdown voltage v (br)ebo i e = 10 a, i c = 0 5.0 v collector cut-off current i cex v ce = 30v, v eb(off) = 3.0v 50 na base cut-off current i bl v ce = 30v, v eb(off) = 3.0v 50 na on characteristics (note 1) i c = 100 a, v ce = 1.0v 40 i c = 1.0ma, v ce = 1.0v 70 i c = 10ma, v ce = 1.0v 100 300 i c = 50ma, v ce = 1.0v 60 dc current gain h fe i c = 100ma, v ce = 1.0v 30 i c = 10ma, i b = 1.0ma 0.20 v collector-emitter sa turation voltage v ce(sat) i c = 50ma, i b = 5.0ma 0.30 v i c = 10ma, i b = 1.0ma 0.65 0.85 v base- emitter saturation voltage v be(sat) i c = 50ma, i b = 5.0ma 0.95 v small signal characteristics output capacitance c obo v cb = 5.0v, f = 1.0mhz, i e = 0 4.0 pf input capacitance c ibo v eb = 0.5v, f = 1.0mhz, i c = 0 8.0 pf input impedance h ie 1.0 10 k ? voltage feedback ratio h re 0.5 8.0 10 -4 small signal current gain h fe 100 400 output admittance h oe v ce = 10v, i c = 1.0ma, f = 1.0khz 1.0 40 s current gain-bandwidth product f t v ce = 20v, i c = 10ma, f = 100mhz 300 mhz noise figure nf v ce = 5.0v, i c = 100 a, r s = 1.0k ? , f = 1.0khz 5.0 db switching characteristics delay time t d 35 ns rise time t r v cc = 3.0v, i c = 10ma, v be(off) = - 0.5v, i b1 = 1.0ma 35 ns storage time t s 200 ns fall time t f v cc = 3.0v, i c = 10ma, i b1 = i b2 = 1.0ma 50 ns note: 1. short duration test pulse used to minimize self-heating.
MMDT3904 preliminary npn epitaxial silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r218-013.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
|
